The new rad-hard process will improve performance by up to 2X (over other currently available Strategic Rad-Hard processes) for devices used in harsh conditions such as space, medical, and energy. This gain is achieved by advancing the process technology to 90 nm for Strategic Rad-Hard electronics from what is currently available in the market which is at 150 nm geometry. Additionally, the use of copper interconnects will serve to increase density for higher performance digital logic and improved performance for analog circuits via lower impedance.