Breakthrough brings GaN advantages to silicon power MOSFETs

Specialist foundry SkyWater Technology and Applied Novel Devices in the US have developed a new type of silicon power MOSFET with significant benefits for fast switching power conversion applications.

AND says its channel engineering enables half the output charge of silicon with near-zero reverse-recovery and ultra-low Qoss as well as a specific on-resistance of under 5 mOhm-mm2 @ 30V BVDSS)with a gate drive as low as 2.5V

These characteristics can substantially reduce parasitic losses incurred in power management systems and improve conversion efficiency in numerous applications including data centres, automotive, electric motor drives, microinverters for renewable energy systems and many others in industrial and consumer markets.

Read the article in eeNews Power Management:

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